收藏本站
W948D6FB / W948D2FB
256Mb Mobile LPDDR
7.11.3 Self Refresh Entry and Exit
CK
CK
t RP
> t RFC
t XSR
t RFC
CKE
Command
PRE
NOP
ARF
NOP
NOP
NOP
ARF
NOP
ACT
Address
Ba, A
Row n
A10(AP)
DQ
Pre All
High-z
Row n
Recommene
d
Enter
Self Refresh
Mode
Exit from
Self Refresh
Mode
Any Command
(Auto Refresh
)
=Don't Care
7.12 Power Down
Power-down is entered when CKE is registered Low (no accesses can be in progress). If power-down occurs when
all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row
active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. In power-down mode,
CKE Low must be maintained, and all other input signals are “Don?t Care”. The min imum power-down duration is
specified by t CKE . However, power-down duration is limited by the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT
command). A valid command may be applied t XP after exit from power-down.
For Clock Stop during Power-Down mode, please refer to the Clock Stop subsection in this specification.
7.12.1 Power-Down Entry and Exit
CK
CK
t RP
t CKE
t XP
CKE
Command
PRE
NOP
NOP
NOP
NOP
NOP
Valid
Address
Valid
A10 (AP)
DQ
Pre All
High-z
Valid
Power Down
Exit from
Any Command
Entry
Precharge Power-Down mode shown; all banks are idle and t RP
is met when Power-down Entry command is issued
- 43 -
Power Down
= Don't Care
Publication Release Date : Oct, 15, 2012
Revision : A01-004
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
相关代理商/技术参数
W948D2FBJX5ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ
W948D2FBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W948D2FBJX5I TR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ, INDUST
W948D2FBJX6E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics 功能描述:LOW POWER DRAM 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W948D2FBJX6ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 166MHZ, 65NM
W948D2FBJX6G 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR
W948D6FB 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR
W948D6FBHX5E 功能描述:IC LPDDR SDRAM 256MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6